Semiconductor Diodes* – IV characteristics with variable power supply

Semiconductor Diodes - IV Characteristics

Semiconductor Diodes

IV Characteristics with Variable Power Supply

Explore the current-voltage (IV) characteristics of a semiconductor diode. Adjust the voltage and observe how the current changes, demonstrating the diode's nonlinear behavior.

Voltage (V)
Current (I)
Diode
Voltage: 0.0 V
Current: 0.0 mA
Observation:

At 0V, the diode conducts minimal current. Adjust the voltage to see how the current changes.

The Science Behind Diode IV Characteristics

Key Concepts:

Semiconductor diodes exhibit nonlinear IV characteristics:

  • Forward Bias: Current increases exponentially after crossing the threshold voltage (~0.7V for Si)
  • Reverse Bias: Minimal current flows until breakdown voltage is reached
  • Threshold Voltage: Minimum voltage needed for significant forward current
  • Breakdown Voltage: Reverse voltage where current increases sharply
Diode Equation:

The Shockley diode equation describes the IV relationship: I = I₀(e^(V/nVₜ) - 1)

Where I₀ is reverse saturation current, Vₜ is thermal voltage, and n is ideality factor.

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