P-N Junction Diode I-V Characteristics
Investigate the current-voltage relationship of a **Silicon P-N Junction Diode**. Observe the exponential increase in current during **Forward Bias** and the breakdown phenomenon in **Reverse Bias**.
Help & Instructions
▼- **Adjust Voltage ($\mathbf{V}$):** Use the main slider to apply voltage from Reverse ($\approx -5 \text{ V}$) to Forward Bias ($\approx +1 \text{ V}$).
- **Observe Current ($\mathbf{I}$):** The calculated current ($I$) and graph marker show the diode's response.
- **Note Knee Voltage:** Identify the forward voltage ($\approx 0.7 \text{ V}$) where the current begins to rise sharply.
- **Note Breakdown Voltage:** Observe the reverse voltage ($\approx -5 \text{ V}$) where the current drastically increases (Breakdown).
- Understand the **Shockley Diode Equation**.
- Identify the **Knee Voltage** ($V_k$) for Silicon.
- Differentiate between **Forward** and **Reverse** Bias regions.
- Understand the function of the diode as a **rectifier**.
Experiment: Measuring Diode Current ($\mathbf{I}$)
Ideal Diode Equation: $I = I_0 \left(e^{\frac{V}{\eta V_T}} - 1\right)$
Diode Equation Parameters:
$I_0$ (Reverse Saturation Current): $1.0 \times 10^{-9} \text{ A}$
$V_T$ (Thermal Voltage @ 300K): $25.85 \text{ mV}$
Ideality Factor ($\eta$): $1.0$ (Assumed)
Current at 0.00 V: $I \approx 0 \text{ mA}$
The diode is a two-terminal device that conducts current primarily in one direction. Its non-linear I-V characteristics are governed by the **diffusion** and **drift** of charge carriers (electrons and holes) across the **depletion region**.
Detailed Physics Explanation
The positive voltage applied to the P-side reduces the potential barrier across the junction. Once $V$ exceeds the **Knee Voltage** ($V_k \approx 0.7 \text{ V}$ for Si), the diffusion current dominates, and $I$ increases **exponentially**.
The negative voltage applied to the P-side increases the potential barrier and widens the depletion region. A very small, constant **Reverse Saturation Current ($I_0$)** flows due to minority carriers. If the voltage reaches the **Breakdown Voltage ($V_{BR}$)**, current suddenly increases due to Zener or avalanche effects.
P-N Junction Diode I-V Characteristics
Investigate the current-voltage relationship of a **Silicon P-N Junction Diode**. Observe the exponential increase in current during **Forward Bias** and the breakdown phenomenon in **Reverse Bias**.
Help & Instructions
▼- **Adjust Voltage ($\mathbf{V}$):** Use the main slider to apply voltage from Reverse ($\approx -5 \text{ V}$) to Forward Bias ($\approx +1 \text{ V}$).
- **Observe Current ($\mathbf{I}$):** The calculated current ($I$) and graph marker show the diode's response.
- **Note Knee Voltage:** Identify the forward voltage ($\approx 0.7 \text{ V}$) where the current begins to rise sharply.
- **Note Breakdown Voltage:** Observe the reverse voltage ($\approx -5 \text{ V}$) where the current drastically increases (Breakdown).
- Understand the **Shockley Diode Equation**.
- Identify the **Knee Voltage** ($V_k$) for Silicon.
- Differentiate between **Forward** and **Reverse** Bias regions.
- Understand the function of the diode as a **rectifier**.
Experiment: Measuring Diode Current ($\mathbf{I}$)
Ideal Diode Equation: $I = I_0 \left(e^{\frac{V}{\eta V_T}} - 1\right)$
Diode Equation Parameters:
$I_0$ (Reverse Saturation Current): $1.0 \times 10^{-9} \text{ A}$
$V_T$ (Thermal Voltage @ 300K): $25.85 \text{ mV}$
Ideality Factor ($\eta$): $1.0$ (Assumed)
Current at 0.00 V: $I \approx 0 \text{ mA}$
The diode is a two-terminal device that conducts current primarily in one direction. Its non-linear I-V characteristics are governed by the **diffusion** and **drift** of charge carriers (electrons and holes) across the **depletion region**.
Detailed Physics Explanation
The positive voltage applied to the P-side reduces the potential barrier across the junction. Once $V$ exceeds the **Knee Voltage** ($V_k \approx 0.7 \text{ V}$ for Si), the diffusion current dominates, and $I$ increases **exponentially**.
The negative voltage applied to the P-side increases the potential barrier and widens the depletion region. A very small, constant **Reverse Saturation Current ($I_0$)** flows due to minority carriers. If the voltage reaches the **Breakdown Voltage ($V_{BR}$)**, current suddenly increases due to Zener or avalanche effects.
P-N Junction Diode I-V Characteristics
Investigate the current-voltage relationship of a **Silicon P-N Junction Diode**. Observe the exponential increase in current during **Forward Bias** and the breakdown phenomenon in **Reverse Bias**.
Help & Instructions
▼- **Adjust Voltage ($\mathbf{V}$):** Use the main slider to apply voltage from Reverse ($\approx -5 \text{ V}$) to Forward Bias ($\approx +1 \text{ V}$).
- **Observe Current ($\mathbf{I}$):** The calculated current ($I$) and graph marker show the diode's response.
- **Note Knee Voltage:** Identify the forward voltage ($\approx 0.7 \text{ V}$) where the current begins to rise sharply.
- **Note Breakdown Voltage:** Observe the reverse voltage ($\approx -5 \text{ V}$) where the current drastically increases (Breakdown).
- Understand the **Shockley Diode Equation**.
- Identify the **Knee Voltage** ($V_k$) for Silicon.
- Differentiate between **Forward** and **Reverse** Bias regions.
- Understand the function of the diode as a **rectifier**.
Experiment: Measuring Diode Current ($\mathbf{I}$)
Ideal Diode Equation: $I = I_0 \left(e^{\frac{V}{\eta V_T}} - 1\right)$
Diode Equation Parameters:
$I_0$ (Reverse Saturation Current): $1.0 \times 10^{-9} \text{ A}$
$V_T$ (Thermal Voltage @ 300K): $25.85 \text{ mV}$
Ideality Factor ($\eta$): $1.0$ (Assumed)
Current at 0.00 V: $I \approx 0 \text{ mA}$
The diode is a two-terminal device that conducts current primarily in one direction. Its non-linear I-V characteristics are governed by the **diffusion** and **drift** of charge carriers (electrons and holes) across the **depletion region**.
Detailed Physics Explanation
The positive voltage applied to the P-side reduces the potential barrier across the junction. Once $V$ exceeds the **Knee Voltage** ($V_k \approx 0.7 \text{ V}$ for Si), the diffusion current dominates, and $I$ increases **exponentially**.
The negative voltage applied to the P-side increases the potential barrier and widens the depletion region. A very small, constant **Reverse Saturation Current ($I_0$)** flows due to minority carriers. If the voltage reaches the **Breakdown Voltage ($V_{BR}$)**, current suddenly increases due to Zener or avalanche effects.
P-N Junction Diode I-V Characteristics
Investigate the current-voltage relationship of a **Silicon P-N Junction Diode**. Observe the exponential increase in current during **Forward Bias** and the breakdown phenomenon in **Reverse Bias**.
Help & Instructions
▼- **Adjust Voltage ($\mathbf{V}$):** Use the main slider to apply voltage from Reverse ($\approx -5 \text{ V}$) to Forward Bias ($\approx +1 \text{ V}$).
- **Observe Current ($\mathbf{I}$):** The calculated current ($I$) and graph marker show the diode's response.
- **Note Knee Voltage:** Identify the forward voltage ($\approx 0.7 \text{ V}$) where the current begins to rise sharply.
- **Note Breakdown Voltage:** Observe the reverse voltage ($\approx -5 \text{ V}$) where the current drastically increases (Breakdown).
- Understand the **Shockley Diode Equation**.
- Identify the **Knee Voltage** ($V_k$) for Silicon.
- Differentiate between **Forward** and **Reverse** Bias regions.
- Understand the function of the diode as a **rectifier**.
Experiment: Measuring Diode Current ($\mathbf{I}$)
Ideal Diode Equation: $I = I_0 \left(e^{\frac{V}{\eta V_T}} - 1\right)$
Diode Equation Parameters:
$I_0$ (Reverse Saturation Current): $1.0 \times 10^{-9} \text{ A}$
$V_T$ (Thermal Voltage @ 300K): $25.85 \text{ mV}$
Ideality Factor ($\eta$): $1.0$ (Assumed)
Current at 0.00 V: $I \approx 0 \text{ mA}$
The diode is a two-terminal device that conducts current primarily in one direction. Its non-linear I-V characteristics are governed by the **diffusion** and **drift** of charge carriers (electrons and holes) across the **depletion region**.
Detailed Physics Explanation
The positive voltage applied to the P-side reduces the potential barrier across the junction. Once $V$ exceeds the **Knee Voltage** ($V_k \approx 0.7 \text{ V}$ for Si), the diffusion current dominates, and $I$ increases **exponentially**.
The negative voltage applied to the P-side increases the potential barrier and widens the depletion region. A very small, constant **Reverse Saturation Current ($I_0$)** flows due to minority carriers. If the voltage reaches the **Breakdown Voltage ($V_{BR}$)**, current suddenly increases due to Zener or avalanche effects.
P-N Junction Diode I-V Characteristics
Investigate the current-voltage relationship of a **Silicon P-N Junction Diode**. Observe the exponential increase in current during **Forward Bias** and the breakdown phenomenon in **Reverse Bias**.
Help & Instructions
▼- **Adjust Voltage ($\mathbf{V}$):** Use the main slider to apply voltage from Reverse ($\approx -5 \text{ V}$) to Forward Bias ($\approx +1 \text{ V}$).
- **Observe Current ($\mathbf{I}$):** The calculated current ($I$) and graph marker show the diode's response.
- **Note Knee Voltage:** Identify the forward voltage ($\approx 0.7 \text{ V}$) where the current begins to rise sharply.
- **Note Breakdown Voltage:** Observe the reverse voltage ($\approx -5 \text{ V}$) where the current drastically increases (Breakdown).
- Understand the **Shockley Diode Equation**.
- Identify the **Knee Voltage** ($V_k$) for Silicon.
- Differentiate between **Forward** and **Reverse** Bias regions.
- Understand the function of the diode as a **rectifier**.
Experiment: Measuring Diode Current ($\mathbf{I}$)
Ideal Diode Equation: $I = I_0 \left(e^{\frac{V}{\eta V_T}} - 1\right)$
Diode Equation Parameters:
$I_0$ (Reverse Saturation Current): $1.0 \times 10^{-9} \text{ A}$
$V_T$ (Thermal Voltage @ 300K): $25.85 \text{ mV}$
Ideality Factor ($\eta$): $1.0$ (Assumed)
Current at 0.00 V: $I \approx 0 \text{ mA}$
The diode is a two-terminal device that conducts current primarily in one direction. Its non-linear I-V characteristics are governed by the **diffusion** and **drift** of charge carriers (electrons and holes) across the **depletion region**.
Detailed Physics Explanation
The positive voltage applied to the P-side reduces the potential barrier across the junction. Once $V$ exceeds the **Knee Voltage** ($V_k \approx 0.7 \text{ V}$ for Si), the diffusion current dominates, and $I$ increases **exponentially**.
The negative voltage applied to the P-side increases the potential barrier and widens the depletion region. A very small, constant **Reverse Saturation Current ($I_0$)** flows due to minority carriers. If the voltage reaches the **Breakdown Voltage ($V_{BR}$)**, current suddenly increases due to Zener or avalanche effects.
